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Issue DateTitleAuthor(s)
2022-01-01A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device ApplicationsZhang, F; Zhang, X; Li, Z; Yi, R; Li, Z; Wang, N; Xu, X; Azimi, Z; Li, L; Lysevych, M; Gan, X; Lu, Y; Tan, HH; Jagadish, C; Fu, L
2022-01-14A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications (Adv. Funct. Mater. 3/2022)Zhang, F; Zhang, X; Li, Z; Yi, R; Li, Z; Wang, N; Xu, X; Azimi, Z; Li, L; Lysevych, M; Gan, X; Lu, Y; Tan, HH; Jagadish, C; Fu, L
2015-09-01Antimony Induced {112}A Faceted Triangular GaAs<inf>1-x</inf>Sb<inf>x</inf>/InP Core/Shell Nanowires and Their Enhanced Optical QualityYuan, X; Caroff, P; Wang, F; Guo, Y; Wang, Y; Jackson, HE; Smith, LM; Tan, HH; Jagadish, C
2016-03-11Atomically thin optical lenses and gratingsYang, J; Wang, Z; Wang, F; Xu, R; Tao, J; Zhang, S; Qin, Q; Luther-Davies, B; Jagadish, C; Yu, Z; Lu, Y
2023-08-08Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers.Wong, WW; Wang, N; Esser, BD; Church, SA; Li, L; Lockrey, M; Aharonovich, I; Parkinson, P; Etheridge, J; Jagadish, C; Tan, HH
2001-01-01Cathodoluminescence depth profiling of ion-implanted GaNKucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G
2011-06-08Characterization of semiconductor nanowires using optical tweezersReece, PJ; Toe, WJ; Wang, F; Paiman, S; Gao, Q; Tan, HH; Jagadish, C
2002-05-01Chemical origin of the yellow luminescence in GaNKucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G
2002-06-17Contact-induced defect propagation in ZnOBradby, JE; Kucheyev, SO; Williams, JS; Jagadish, C; Swain, MV; Munroe, P; Phillips, MR
2005-03-14Controlling the properties of InGaAs quantum dots by selective-area epitaxyMokkapati, S; Lever, P; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR
2018-06-21The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorodsZhao, B; Lockrey, MN; Caroff, P; Wang, N; Li, L; Wong-Leung, J; Tan, HH; Jagadish, C
2022-09-01Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength OptoelectronicsAzimi, Z; Gopakumar, A; Li, L; Kremer, F; Lockrey, M; Wibowo, AA; Nguyen, HT; Tan, HH; Jagadish, C; Wong-Leung, J
2001-10-01Effects of excitation density on cathodoluminescence from GaNKucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C
2014-08-30Effects of high temperature annealing on defects and luminescence properties in H implanted ZnOChan, KS; Ton-That, C; Vines, L; Choi, S; Phillips, MR; Svensson, BG; Jagadish, C; Wong-Leung, J
2014-10-15Erratum: Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO (2014 J. Phys. D: Appl. Phys. 47 342001)Chan, KS; Ton-That, C; Vines, L; Choi, S; Phillips, MR; Svensson, BG; Jagadish, C; Wong-Leung, J
2017-07-25Excited State Biexcitons in Atomically Thin MoSe<inf>2</inf>Pei, J; Yang, J; Wang, X; Wang, F; Mokkapati, S; Lü, T; Zheng, JC; Qin, Q; Neshev, D; Tan, HH; Jagadish, C; Lu, Y
2014-02-10Fabrication and photoluminescence studies of GaN nanopillarsReddy, NP; Naureen, S; Wang, F; Vora, K; Shahid, N; Karouta, F; Tan, HH; Jagadish, C
2020-11Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays.Yuan, X; Wang, N; Tian, Z; Zhang, F; Li, L; Lockrey, M; He, J; Jagadish, C; Tan, HH
2014-02-10Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantationYe, JD; Zhen, K; Gu, SL; Wang, F; Tan, HH; Jagadish, C
2017-11-22Giant enhancement and control of second-harmonic radiation from algaas nanoantennasRahmani, M; Kruk, S; Camacho-Morales, R; Xu, L; Wang, L; Miroshnichenko, AE; Smirnova, D; Tan, H; Karouta, F; Naureen, S; Vora, K; Solntsev, AS; Carletti, L; De Angelis, C; Jagadish, C; Kivshar, YS; Neshev, DN
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