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Issue Date | Title | Author(s) |
2022-01-01 | A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications | Zhang, F; Zhang, X; Li, Z; Yi, R; Li, Z; Wang, N; Xu, X; Azimi, Z; Li, L; Lysevych, M; Gan, X; Lu, Y; Tan, HH; Jagadish, C; Fu, L |
2022-01-14 | A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications (Adv. Funct. Mater. 3/2022) | Zhang, F; Zhang, X; Li, Z; Yi, R; Li, Z; Wang, N; Xu, X; Azimi, Z; Li, L; Lysevych, M; Gan, X; Lu, Y; Tan, HH; Jagadish, C; Fu, L |
2015-09-01 | Antimony Induced {112}A Faceted Triangular GaAs<inf>1-x</inf>Sb<inf>x</inf>/InP Core/Shell Nanowires and Their Enhanced Optical Quality | Yuan, X; Caroff, P; Wang, F; Guo, Y; Wang, Y; Jackson, HE; Smith, LM; Tan, HH; Jagadish, C |
2016-03-11 | Atomically thin optical lenses and gratings | Yang, J; Wang, Z; Wang, F; Xu, R; Tao, J; Zhang, S; Qin, Q; Luther-Davies, B; Jagadish, C; Yu, Z; Lu, Y |
2001-01-01 | Cathodoluminescence depth profiling of ion-implanted GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G |
2011-06-08 | Characterization of semiconductor nanowires using optical tweezers | Reece, PJ; Toe, WJ; Wang, F; Paiman, S; Gao, Q; Tan, HH; Jagadish, C |
2002-05-01 | Chemical origin of the yellow luminescence in GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G |
2002-06-17 | Contact-induced defect propagation in ZnO | Bradby, JE; Kucheyev, SO; Williams, JS; Jagadish, C; Swain, MV; Munroe, P; Phillips, MR |
2005-03-14 | Controlling the properties of InGaAs quantum dots by selective-area epitaxy | Mokkapati, S; Lever, P; Tan, HH; Jagadish, C; McBean, KE; Phillips, MR |
2018-06-21 | The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods | Zhao, B; Lockrey, MN; Caroff, P; Wang, N; Li, L; Wong-Leung, J; Tan, HH; Jagadish, C |
2022-09-01 | Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics | Azimi, Z; Gopakumar, A; Li, L; Kremer, F; Lockrey, M; Wibowo, AA; Nguyen, HT; Tan, HH; Jagadish, C; Wong-Leung, J |
2001-10-01 | Effects of excitation density on cathodoluminescence from GaN | Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C |
2014-08-30 | Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO | Chan, KS; Ton-That, C; Vines, L; Choi, S; Phillips, MR; Svensson, BG; Jagadish, C; Wong-Leung, J |
2014-10-15 | Erratum: Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO (2014 J. Phys. D: Appl. Phys. 47 342001) | Chan, KS; Ton-That, C; Vines, L; Choi, S; Phillips, MR; Svensson, BG; Jagadish, C; Wong-Leung, J |
2017-07-25 | Excited State Biexcitons in Atomically Thin MoSe<inf>2</inf> | Pei, J; Yang, J; Wang, X; Wang, F; Mokkapati, S; Lü, T; Zheng, JC; Qin, Q; Neshev, D; Tan, HH; Jagadish, C; Lu, Y |
2014-02-10 | Fabrication and photoluminescence studies of GaN nanopillars | Reddy, NP; Naureen, S; Wang, F; Vora, K; Shahid, N; Karouta, F; Tan, HH; Jagadish, C |
2014-02-10 | Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation | Ye, JD; Zhen, K; Gu, SL; Wang, F; Tan, HH; Jagadish, C |
2017-11-22 | Giant enhancement and control of second-harmonic radiation from algaas nanoantennas | Rahmani, M; Kruk, S; Camacho-Morales, R; Xu, L; Wang, L; Miroshnichenko, AE; Smirnova, D; Tan, H; Karouta, F; Naureen, S; Vora, K; Solntsev, AS; Carletti, L; De Angelis, C; Jagadish, C; Kivshar, YS; Neshev, DN |
2017-02-01 | Growth and optical properties of In<inf>x</inf>Ga<inf>1−x</inf>P nanowires synthesized by selective-area epitaxy | Berg, A; Caroff, P; Shahid, N; Lockrey, MN; Yuan, X; Borgström, MT; Tan, HH; Jagadish, C |
2022-06-13 | High-density individually addressable platinum nanoelectrodes for biomedical applications | Raj, V; Gopakumar, A; Vaidya, G; Scott, J; Toth, M; Jagadish, C; Gautam, V |