Browsing by Author Godlewski, M

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Issue DateTitleAuthor(s)
15-Jan-2004Atomic layer deposition of thin films of ZnSe - Structural and optical characterizationGuziewicz, E; Godlewski, M; Kopalko, K; Łusakowska, E; Dynowska, E; Guziewicz, M; Godlewski, MM; Phillips, M
1-Jun-2001Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the systemGodlewski, M; Mackowski, S; Karczewski, G; Goldys, EM; Phillips, MR
1-Jan-2004Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayersGodlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
1-Jun-2001Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layerGodlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM
1-Nov-2001Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structuresGodlewski, M; Goldys, EM; Butcher, KSA; Phillips, MR; Pakula, K; Baranowski, JM
1-Jan-2003Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emissionGodlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
1-Jul-2007Color tuning of white light emission from thin films of ZnSeGodlewski, M; Skrobot, M; Guziewicz, E; Phillips, MR
29-Feb-2004Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructureGodlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S
1-Oct-2005Dynamics of light emission in CdMnS nanoparticlesGodlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W
1-Nov-2005Growth and characterization of ZnO nanoparticlesTomaszewska-Grzeda, A; Lojkowski, W; Godlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR
1-Jan-2004In-depth and in-plane profiling of light emission properties of InGaN-based laser diodeGodlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S
7-Nov-2005Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structuresGodlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D
1-Oct-2005Light emission properties of GaN-based laser diode structuresGodlewski, M; Phillips, MR; Czernecki, R; Targowski, G; Perlin, P; Leszczynski, M; Figge, S
18-May-2004Luminescent properties of wide bandgap materials at room temperatureGodlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A
20-Oct-2004Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compoundsGodlewski, M; Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Gołacki, Z; Karczewski, G; Bergman, PJ; Klar, PJ; Heimbrodt, W; Phillips, MR
30-Apr-2007Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganeseGodlewski, M; Yatsunenko, S; Ivanov, VY; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W
24-May-2004Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxyKopalko, K; Godlewski, M; Guziewicz, E; Łusakowska, E; Paszkowicz, W; Domagała, J; Dynowska, E; Szczerbakow, A; Wójcik, A; Phillips, MR
1-Jan-2004Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterizationKopalko, K; Godlewski, M; Lusakowska, E; Paszkowicz, W; Domagala, JZ; Szczerbakow, A; Ivanov, VY; Godlewski, MM; Phillips, MR; Munoz, M; Tamargo, M; Furdyna, J; Luo, H
1-Oct-2009Optical properties of manganese doped wide band gap ZnS and ZnOGodlewski, M; Wójcik-Głodowska, A; Guziewicz, E; Yatsunenko, S; Zakrzewski, A; Dumont, Y; Chikoidze, E; Phillips, MR
1-Jan-2005Origin of ultrafast component of photoluminescence decay in nanostructures doped with transition metal or rare-earth ionsGodlewski, M; Yatsunenko, S; Ivanov, VYU; Khachapuridze, A; Świa̧tek, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W